Progress in the Technology of High Efficient Removal of Trace Boron and Phosphorus from Trichlorosilane

化学工业与工程

Chemcial Industry and Engineering

2018, Vol. 35

Issue (2) :42-48 DOI: 10.13353/j.issn.1004.9533.20161071

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Progress in the Technology of High Efficient Removal of Trace Boron and Phosphorus from Trichlorosilane

Qian Hao, Huang Guoqiang

School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

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Abstract

The modified Siemens method is the mainstream process of polysilicon production. This review gives a general introduction to the background and status of polysilicon production. The plight in polysilicon industry and the high efficient separation method of trace boron and phosphorus impurities from trichlorosilane in polysilicon production are proposed. The existing form and separation difficulties of trace boron and phosphorus impurities from trichlorosilane in polysilicon production are discussed. The high efficient separation methods of trace boron and phosphorus impurities from trichlorosilane in polysilicon production, including partial hydrolysis、complexation, adsorption etc, are introduced. Through comprehensive classification and discussion, the advantages and disadvantages of the separation methods are summarized, key challenges in industrialization of the separation methods are brought forward, and the application foreground is expected.

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	Qian Hao
	Huang Guoqiang

Keywords： polysilicon； trichlorosilane； boron； phosphorus； complexation； adsorption

Received 2016-04-18;

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Qian Hao, Huang Guoqiang.Progress in the Technology of High Efficient Removal of Trace Boron and Phosphorus from Trichlorosilane[J] Chemcial Industry and Engineering, 2018,V35(2): 42-48

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