pn型Cu<sub>2</sub>O/CdS纳米线的制备及性能

摘要采用电沉积法，在AAO模板中成功制备出pn型Cu₂O/CdS纳米线阵列。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）和X射线衍射分析（XRD）对样品的形貌和结构进行表征，利用光照开路电位测试和光吸收光谱测试对Cu₂O/CdS纳米线的性能进行了研究。纳米线的直径约100 nm，与AAO模板孔径相同，XRD结果表明Cu₂O/CdS纳米线由立方晶系的Cu₂O和立方晶系与六方晶系混合晶系的CdS组成。Cu₂O/CdS纳米线的光响应性能增强。在Xe灯照射下Cu₂O/CdS纳米线表现出良好的光催化性能，光照7 h后，Cu₂O/CdS纳米线对罗丹明B的降解效率达到66.02%。

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	张卫国
	王淑娟
	姚素薇
	王宏智

关键词： Cu₂O/CdS纳米线；光吸收；光催化

Abstract： pn-Type Cu₂O/CdS nanowires arrays were successfully fabricated in the porous anodic aluminum oxide (AAO) template by an electrodeposition method. The surface morphology of Cu₂O/CdS nanowires was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Structural analysis of Cu₂O/CdS nanowires was discussed by X-ray diffraction (XRD) analysis. The difference of open circuit potential and optical absorption spectra were measured to research the properties of Cu₂O/CdS nanowires. The diameter of the nanowires is about 100 nm, which is the same as the pore diameter of AAO template. X-ray diffraction analysis identifies a cubic structure of the Cu₂O and mixed crystal structures of cubic and hexagonal of the CdS. Light response property of Cu₂O/CdS nanowires is enhanced. Meanwhile, Cu₂O/CdS nanowires arrays exhibit a good activity for photodegrading Rhodamine B under a Xe lamp irradiation and the degradation efficiency is up to 66.02% after the degradation for 7 h.

Keywords： Cu₂O/CdS nanowires； light absorption； photocatalysis

Received 2016-05-27;

Corresponding Authors: 王宏智,E-mail:wanghz@tju.edu.cn Email: wanghz@tju.edu.cn

About author: 张卫国(1971-),男,博士研究生,现从事光催化,超级电容器方面的研究。

引用本文:

张卫国, 王淑娟, 姚素薇, 王宏智.pn型Cu₂O/CdS纳米线的制备及性能[J]. 化学工业与工程, 2018,35(6): 1-6

Zhang Weiguo, Wang Shujuan, Yao Suwei, Wang Hongzhi.Synthesis and Photoelectrochemical Properties of pn-Type Cu₂O/CdS Nanowires[J]. Chemcial Industry and Engineering, 2018,35(6): 1-6

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