[1] | HAYMANPW ,DAMRW ,KLASENSHA .Meth odofpreparationofsemiconductingmaterials[P].German:929350,1955623. | [2] | ��͢��,���Ծ,��ռ��,��.�����մɲ���[M].���:����ѧ������,1993. | [3] | Ī�Ժ�.�뵼���մɼ�������Ԫ��[M].�Ϻ�:�Ϻ��Ƽ���ѧ������,1983. | [4] | NEMOTOH ,ODAI.DirectexaminationsofPTCactionofsinglegrainboundariesinsemiconductingBaTiO3 ceramics[J].JAmCeramSoc,1980,63(7��8):398401. | [5] | HEYWANGW .Bariumtitanateasasemiconductorwithblockinglayers[J].SolidStateElectron,1961,3(1):5158. | [6] | JONKERGH .Someaspectsofsemiconductingbariumtitanate[J].SolidStateElectron,1964,7:895903. | [7] | DENIALSJ,HARDTLKH .Electricalconductivityathightemperaturesofdornor dopedbariumtitan ateceramics[J].PhilipsResRep,1976,31(5):489. | [8] | KULWICKIBM .PTCmaterialstecnology[M ].US :AmericanCeramicSociety,1981. | [9] | ���.�����������[M].�ɶ�:�ɶ����ӿƼ���ѧ������,1990. | [10] | �����.˫ʩ�����Ӷ�BaTiO3���뵼�ɽṹ�����ܵ�Ӱ��[J].����Ԫ�������,1994,13(2):2124. | [11] | KATSUROHAYASHI,TAKAHISAJYAMAMO TO ,TAKETOSAKUMA .Grainorientationdepen denceofthePTCReffectinniobium dopedbariumtitanate[J].JAmCeramSoc,1996,79(6):16691672. |
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