Abstract：
The Siemens process was extensively applied to the production of polycrystalline silicon. The growth of Si from SiHCl3 in H2 by chemical vapor deposition（CVD）takes place in the CVD reactor，it accompanies with momentum, heat, mass transfer processes and chemical reaction. A good compromise between internal flow field and temperature field uniformity has great influence on the energy consumption of CVD reactor. In this study, a new design of CVD reactor was proposed. A different flow pattern formed due to setting a shield in the reactor. The shield divides the gas inlets and outlets into different zones compared with traditional reactor whose gas inlets and outlets in the same zone. Gases flow upwards after entering the reactor and have chemical vapor deposition reaction, then go across the top of the shield, finally flow out the outlets. Our study focused on the design of shield structure in order to attain good internal flow field and temperature field uniformity. According to the CFD simulation, we found that the gradients of temperature were lower in the horizontal direction, which was contrast to the existing reactor, also the backflow areas were reduced effectively and the temperature in the reactor was lower. This study provides a method for designing CVD reactor so as to improve the uniformity of flow field and temperature field, and accomplish the target of saving energy consumption.
DUAN Lian, ZHOU Yang, LIU Chun-Jiang.Research of Flow Field and Temperature Field in the CVD Reactor[J]. Chemcial Industry and Engineering, 2014,31(6): 69-74
2014, Vol. 31 
